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参数资料
| 型号： | FDD6N50FTM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 5.5A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.15 欧姆 @ 2.75A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19.8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 960pF @ 25V |
| 功率 - 最大： | 89W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD6N50FTMDKR |
Package Marking and Ordering Information
Part Number
FDD6N50FTM
Top Mark
FDD6N50F
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics
T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V, T J = 25 o C
I D = 250 μ A, Referenced to 25 o C
V DS = 500 V, V GS = 0 V
V DS = 400 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
500
-
-
-
-
-
0.15
-
-
-
-
-
10
100
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 2.75 A
V DS = 40 V, I D = 2.75 A
3.0
-
-
-
0.95
4.3
5.0
1.15
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
-
-
-
720
85
6.3
960
115
9.5
pF
pF
pF
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 400 V, I D = 6 A,
V GS = 10 V
(Note 4)
-
-
-
15
4.4
6.1
19.8
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250 V, I D = 6 A,
V GS = 10 V, R G = 25 Ω
(Note 4)
-
-
-
-
17
28.3
33.4
20.5
44
66.6
76.7
51
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
5.5
22
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 5.5 A
V GS = 0 V, I SD = 5.5 A,
dI F /dt = 100 A/ μ s
-
-
-
-
85
0.15
1.5
-
-
V
ns
μ C
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 16 mH, I AS = 5.5 A, V DD = 50 V, R G = 25 Ω , starting T J = 25°C.
3: I SD ≤ 5.5 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25°C.
4: Essentially independent of operating temperature typical characteristics.
?2012 Fairchild Semiconductor Corporation
FDD6N50F Rev. C1
2
www.fairchildsemi.com
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