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参数资料
| 型号： | FDFS6N303_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel MOSFET with Schottky Diode |
| 中文描述： | 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 68K |
| 代理商： | FDFS6N303_NL |
October 2003
FDFS6N303
N-Channel MOSFET with Schottky Diode
General Description
Features
MOSFET Maximum Ratings T
A = 25
oC unless otherwise noted
Symbol
Parameter
FDFS6N303
Units
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
6
A
- Pulsed
30
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1c)
0.9
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
Schottky Diode Maximum Ratings T
A = 25
oC unless otherwise noted
V
RRM
Repetitive Peak Reverse Voltage
30
V
I
O
Average Forward Current
(Note 1a)
2
A
2003 Fairchild Semiconductor Corporation
FDFS6N303 Rev. D3
6 A, 30 V. R
DS(ON) = 0.035
@ V
GS = 10 V.
R
DS(ON)
= 0.055
@ V
GS = 4.5 V.
V
F < 0.28 V @ 0.1 A
V
F < 0.42 V @ 3 A
V
F < 0.50 V @ 6 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
General purpose pinout for design flexibility.
Ideal for DC/DC converter applications.
SOT-23
SuperSOT
TM-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM-6
The FDFS6N303 incorporates a high cell density MOSFET
and low forward drop (0.35V) Schottky diode into a single
surface mount power package. The MOSFET and Schottky
diode are isolated
inside the package.
The general pur-
pose pinout has been chosen to maximize flexibility and
ease of use. This product is particularly suited for switch-
ing applications such as DC/DC buck, boost, synchronous,
and non-synchronous converters where the MOSFET is driven
as low as 4.5V and fast switching, high efficiency and
small PCB footprint
is desirable.
A
C
S
A
SO-8
D
C
G
pin 1
FDFS
6N303
A
C
D
G
S
6
7
5
1
2
3
4
8
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相关代理商/技术参数 |
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| FDFS6N548 | 功能描述:MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDFS6N754 | 功能描述:MOSFET 30V 4A 56OHM NCH POWER TRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG.1B.110.CZZ | 功能描述:环形推拉式连接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 产品类型:Connectors 系列:HR10 触点类型:Socket (Female) 外壳类型:Receptacle 触点数量:4 外壳大小:7 安装风格:Panel 端接类型:Solder 电流额定值:2 A |
| FDG.1B.155.LNN | 功能描述:环形推拉式连接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 产品类型:Connectors 系列:HR10 触点类型:Socket (Female) 外壳类型:Receptacle 触点数量:4 外壳大小:7 安装风格:Panel 端接类型:Solder 电流额定值:2 A |
| FDG.1B.304.CLAD52 | 功能描述:环形推拉式连接器 STRAIGHT PLUG LONG VERSION RoHS:否 制造商:Hirose Connector 产品类型:Connectors 系列:HR10 触点类型:Socket (Female) 外壳类型:Receptacle 触点数量:4 外壳大小:7 安装风格:Panel 端接类型:Solder 电流额定值:2 A |
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