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参数资料
| 型号： | FDFS6N303_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel MOSFET with Schottky Diode |
| 中文描述： | 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 2/5页 |
| 文件大小： | 68K |
| 代理商： | FDFS6N303_NL |
Electrical Characteristics (T
A = 25
oC unless otherwise noted )
MOSFET ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, I D = 250 A
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS = 24 V, VGS = 0 V
1
A
T
J =125°C
20
A
I
GSSF
Gate - Body Leakage, Forward
V
GS = 20 V, VDS = 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -20 V, VDS= 0 V
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = 250 A
1
1.7
3
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = 10 V, I D = 6 A
0.025
0.035
V
GS = 4.5 V, I D = 4.8 A
0.043
0.055
g
FS
Forward Transconductance
V
DS = 10 V, ID = 6 A
12
S
I
D(ON)
On-State Drain Current
V
GS = 10 V, VDS = 5 V
15
A
C
iss
Input Capacitance
V
DS = 15 V, VGS = 0 V,
350
pF
C
oss
Output Capacitance
f = 1.0 MHz
220
pF
C
rss
Reverse Transfer Capacitance
80
pF
Q
g
Total Gate Charge
V
DS = 15 V, ID = 6 A, VGS = 10 V
12
17
nC
t
D(on)
Turn - On Delay Time
V
DD = 10 V, ID = 1 A,
V
GS = 4.5 V, RGEN = 6
7.5
15
ns
t
r
Turn - On Rise Time
12
25
ns
t
D(off)
Turn - Off Delay Time
13
25
ns
t
f
Turn - Off Fall Time
6
15
ns
MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS = 0 V, I S = 1.3 A
(Note 2)
0.8
1.2
V
SCHOTTKY DIODE CHARACTERISTICS
B
V
Reverse Breakdown Voltage
I
R = 1 mA
30
V
I
R
Reverse Leakage
V
R = 30 V
0.5
mA
V
F
Forward Voltage
I
F = 0.1 A
280
mV
I
F = 3 A
420
I
F = 6 A
500
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDFS6N303 Rev. D3
c. 135
OC/W on a 0.003 in2
pad of 2oz copper.
b. 125
OC/W on a 0.02 in2
pad of 2oz copper.
a. 78
OC/W on a 0.5 in2
pad of 2oz copper.
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