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参数资料
| 型号： | FDG311N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 1.9A SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 115 毫欧 @ 1.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 270pF @ 10V |
| 功率 - 最大： | 480mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
| 其它名称： | FDG311N-ND FDG311NTR |
Electrical Characteristics
T A = 25 C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
I GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
V DS = 16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
V GS = -8 V, V DS = 0 V
20
14
1
100
-100
V
mV/ ° C
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
0.4
0.9
-3
1.5
V
mV/ ° C
R DS(on)
Static Drain-Source
On-Resistance
V GS = 4.5 V,
V GS = 4.5 V,
I D = 1.9 A
I D = 1.9 A,
T J = 125 ° C
0.082
0.110
0.115
0.170
?
V GS = 2.5 V, I D = 1.6 A
0.105
0.150
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 0.5 A
4
6
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
270
55
20
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10 V, I D = 1 A,
V GS = 5 V, R GEN = 6 ?
V DS = 10 V, I D = 1.9 A,
V GS = 4.5 V
5
9
10
2
3
0.6
0.9
12
17
18
6
4.5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
V SD
Drain-Source Diode Forward
V GS = 0 V, I S = 0.42 A
(Note 2)
0.7
1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 170 ° C/W when mounted on a 1 in 2 pad of 2oz copper.
b) 260 ° C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDG311N Rev. D
相关PDF资料 |
PDF描述 |
|---|---|
| FDG312P | MOSFET P-CH 20V 1.2A SC70-6 |
| FDG313N_D87Z | MOSFET N-CH 25V 0.95A SC70-6 |
| FDG315N | MOSFET N-CH 30V 2A SC70-6 |
| FDG316P | MOSFET P-CH 30V 1.6A SC70-6 |
| FDG327NZ | MOSFET N-CH 20V 1.5A SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG311N | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 20V, 1.9A, SC-70 |
| FDG311N_Q | 功能描述:MOSFET SC70-6 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG312P | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG313N | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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