参数资料
| 型号： | FDG6331L |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IC LOAD SWITCH INT 8V SC70-6 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 1 |
| 类型： | 高端开关 |
| 输出数： | 1 |
| Rds（开）： | 260 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 800mA |
| 输入电压： | 2.5 V ~ 8 V |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1216 (CN2011-ZH PDF) |
| 其它名称： | FDG6331LDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV IN
Vin Breakdown Voltage
V ON/OFF = 0 V, I D = –250 μ A
8
V
I Load
Zero Gate Voltage Drain Current
V IN = –6.4 V,
V ON/OFF = 0 V
–1
μ A
I FL
I RL
Leakage Current, Forward
Leakage Current, Reverse
V ON/OFF = 0 V, V IN = 8 V
V ON/OFF = 0 V, V IN = –8 V
100
–100
nA
nA
On Characteristics
(Note 2)
V ON/OFF (th)
Gate Threshold Voltage
V IN = V ON/OFF , I D = –250 μ A
0.4
0.9
1.5
V
R DS(on)
Static Drain–Source
On–Resistance (Q2)
V IN = 4.5 V,
V IN =2.5 V,
I D = –0.8 A
I D = –0.7 A
155
193
260
330
m ?
V IN = 1.8 V,
I D = –0.6 A
248
450
R DS(on)
Static Drain–Source
On–Resistance (Q1)
V IN = 4.5 V,
V IN = 2.7 V,
I D = 0.4A
I D = 0.2 A
310
380
400
500
m ?
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–0.25
A
V SD
Drain–Source Diode Forward
V ON/OFF = 0 V, I S = –0.25 A (Note 2)
–1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ JA is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDG6331L Load Switch Application Circuit
IN
R1
Q2
Q1
C1
OUT
LOAD
ON/OFF
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.
FDG6331L Rev B (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDG6342L | IC LOAD SWITCH INTEGRATED SC70-6 |
| FDMF6704A | MODULE DRMOS XS 40-MLP |
| FDMF6704 | IC DRMOS MODULE 1000KHZ 40-MLP |
| FDMF6705B | MOSFET DRMOS 40A 300KHZ 40PQFN |
| FDMF6705V | MODULE DRMOS 40A 1000KHZ 40PQFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG6331L_Q | 功能描述:电源开关 IC - 配电 Integ. Load Switch RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| FDG6332C | 功能描述:MOSFET 20V N&P-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6332C"F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N AND P CH 20V 0.18OHM 700mA 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N AND P CH, 20V, 0.18OHM, 700mA, |
| FDG6332C_F085 | 功能描述:MOSFET 20V N&P Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG6332C_G | 制造商:Fairchild Semiconductor Corporation 功能描述:LOW POWER MOSFET |
发布紧急采购，3分钟左右您将得到回复。