参数资料
型号: FDMC3612
厂商: Fairchild Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH 100V 8-MLP
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 3.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 110 毫欧 @ 3.3A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 21nC @ 10V
输入电容 (Ciss) @ Vds: 880pF @ 50V
功率 - 最大: 2.3W
安装类型: 表面贴装
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-MLP(3.3x3.3)
包装: 标准包装
其它名称: FDMC3612DKR
October 2013
FDMC3612
N-Channel Power Trench ? MOSFET
100 V, 12 A, 110 m Ω
Features
Max r DS(on) = 110 m Ω at V GS = 10 V, I D = 3.3 A
Max r DS(on) = 122 m Ω at V GS = 6 V, I D = 3.0 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
Top
Bottom
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench ? process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
DC - DC Conversion
PSE Switch
8
7
6
5
D D
D
D
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
1
2
3
4
G S
S
S
MLP 3.3x3.3
MOSFET Maximum Ratings T C = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
100
±20
16
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
12
3.3
A
-Pulsed
15
E AS
Single Pulse Avalanche Energy
(Note 3)
32
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
35
2.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to + 150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3.5
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC3612
Device
FDMC3612
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMC3612 Rev.C3
1
www.fairchildsemi.com
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FDMC4435BZ_F125 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMC4435BZ_F126 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMC4435BZ_F127 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDMC4436BZ 制造商:Fairchild Semiconductor Corporation 功能描述: