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| 型号： | FDMC4435BZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 8.5A POWER33 |
| 产品目录绘图： | MOSFET MLP 3.3x3.3 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 8.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2045pF @ 15V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power33 |
| 供应商设备封装： | MLP（3.3x3.3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMC4435BZDKR |
September 2010
FDMC4435BZ
P-Channel Power Trench ? MOSFET
-30 V, -18 A, 20 m :
Features
? Max r DS(on) = 20 m : at V GS = -10 V, I D = -8.5 A
? Max r DS(on) = 37 m : at V GS = -4.5 V, I D = -6.3 A
? Extended V GSS range (-25 V) for battery applications
? High performance trench technology for extremely low r DS(on)
? High power and current handling capability
? HBM ESD protection level >7 kV typical (Note 4)
? 100% UIL Tested
? Termination is Lead-free and RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor ’s advanced Power Trench ? process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
Applications
? High side in DC - DC Buck Converters
? Notebook battery power management
? Load switch in Notebook
Top
Bottom
Pin 1
S
S
S
G
D
D
D
D
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
MLP 3.3x3.3
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
Ratings
-30
±25
-18
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
-32
-8.5
A
-Pulsed
-50
E AS
Single Pulse Avalanche Energy
(Note 3)
24
mJ
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
31
2.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R T JC
R T JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
4
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC4435BZ
Device
FDMC4435BZ
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDMC4435BZ Rev.D2
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC4435BZ_F125 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC4435BZ_F126 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC4435BZ_F127 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC4436BZ | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMC510P | 功能描述:MOSFET 20V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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