- 您现在的位置：买卖IC网 > Datasheet目录420 > FDMC4435BZ (Fairchild Semiconductor)MOSFET P-CH 30V 8.5A POWER33 Datasheet资料下载
参数资料
| 型号： | FDMC4435BZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 8.5A POWER33 |
| 产品目录绘图： | MOSFET MLP 3.3x3.3 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 8.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2045pF @ 15V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power33 |
| 供应商设备封装： | MLP（3.3x3.3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMC4435BZDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
' BV DS S
' T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = -250 P A, V GS = 0 V
I D = -250 P A, referenced to 25 °C
-30
- 22
V
mV/°C
I DSS
Zero Gate Voltage Drain Current
V DS = -24 V,
V GS = 0 V,
T J = 125 °C
-1
-100
P A
I GSS
Gate to Source Leakage Current
V GS = ±25 V, V DS = 0 V
±10
P A
On Characteristics
V GS(th)
' V GS(th)
' T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 P A
I D = -250 P A, referenced to 25 °C
-1.0
-1.9
5.3
-3.0
V
mV/°C
V GS = -10 V, I D = -8.5 A
15
20
r DS(on)
g FS
Static Drain to Source On Resistance
Forward Transconductance
V GS = -4.5 V, I D = -6.3 A
V GS = -10 V, I D = -8.5 A,
T J = 125 °C
V DD = -5 V, I D = -8.5 A
23
21
24
37
28
m :
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = -15 V, V GS = 0 V,
f = 1 MHz
f = 1 MHz
1540
295
260
5
2045
395
385
pF
pF
pF
:
Switching Characteristics
t d(on)
Turn-On Delay Time
10
20
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = -15 V, I D = -8.5 A,
V GS = -10 V, R GEN = 6 :
V GS = 0 V to -10 V
V GS = 0 V to -4.5 V V DD = -15 V,
I D = -8.5 A
6
34
20
33
17
5
9
12
55
36
46
24
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = -8.5A
V GS = 0 V, I S = -1.9 A
I F = -8.5 A, di/dt = 100 A/ P s
(Note 2)
(Note 2)
0.92
0.75
22
11
1.5
1.2
V
ns
nC
NOTES:
1. R T JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R T JC is guaranteed by design while R T CA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 30 0 P s, Duty cycle < 2.0 %.
3. E AS of 24 mJ is based on starting T J = 25 °C, L = 1 mH, I AS = -7 A, V DD = -27 V, V GS = -10 V. 100% test at L = 3 mH, I AS = -4 A.
4. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
?2010 Fairchild Semiconductor Corporation
FDMC4435BZ Rev.D2
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMC510P | MOSFET P-CH 20V 18A 8-MLP |
| FDMC5614P | MOSFET P-CH 60V 5.7A POWER33 |
| FDMC6296 | MOSFET N-CH 30V 11.5A LL 8MLP |
| FDMC6675BZ | MOSFET P-CH 30V 9.5A POWER33 |
| FDMC6890NZ | MOSFET N-CH DUAL 20V 4A POWER33 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC4435BZ_F125 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC4435BZ_F126 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC4435BZ_F127 | 功能描述:MOSFET -30V P-CH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC4436BZ | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMC510P | 功能描述:MOSFET 20V P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。