- 您现在的位置：买卖IC网 > Datasheet目录420 > FDMC86102LZ (Fairchild Semiconductor)MOSFET N-CH 100V 7A 8MLP Datasheet资料下载
参数资料
| 型号： | FDMC86102LZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 7A 8MLP |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 6.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1290pF @ 50V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-MLP（3.3X3.3），Power33 |
| 包装： | 标准包装 |
| 其它名称： | FDMC86102LZDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 80 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
100
71
1
±10
V
mV/°C
μ A
μ A
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
1.0
1.6
-6
2.2
V
mV/°C
V GS = 10 V, I D = 6.5 A
19
24
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 5.5 A
25
35
m Ω
V GS = 10 V, I D = 6.5 A, T J = 125 °C
31
40
g FS
Forward Transconductance
V DS = 5 V, I D = 6.5 A
24
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 50 V, V GS = 0 V,
f = 1 MHz
969
181
9
0.4
1290
240
15
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
7.1
15
ns
t r
t d(off)
t f
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 50 V, I D = 6.5 A,
V GS = 10 V, R GEN = 6 Ω
2.3
19
2.5
10
35
10
ns
ns
ns
Q g(TOT)
Q g(TOT)
Q gs
Total Gate Charge
Total Gate Charge
Total Gate Charge
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V
V DD = 50 V,
I D = 6.5 A
15.3
7.6
2.4
22
11
nC
nC
nC
Q gd
Gate to Drain “Miller” Charge
2.5
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 6.5 A
V GS = 0 V, I S = 2 A
I F = 6.5 A, di/dt = 100 A/ μ s
(Note 2)
(Note 2)
0.80
0.72
42
40
1.3
1.2
67
64
V
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. Starting T J = 25 ° C; N-ch: L = 1 mH, I AS = 13 A, V DD = 90 V, V GS = 10 V.
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
?2011 Fairchild Semiconductor Corporation
FDMC86102LZ Rev. C3
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMC86102L | MOSFET N-CH 100V 7A POWER33 |
| FDMC86102 | MOSFET N-CH 100V 8-MLP |
| FDMC86116LZ | MOSFET N-CH 100V 3.3A 8-MLP |
| FDMC8622 | MOSFET N-CH 100V 4A POWER33 |
| FDMC86240 | MOSFET N-CH 150V 16A POWER33 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC86106LZ | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC86106LZ_13 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 m?? |
| FDMC86116LZ | 功能描述:MOSFET 100V/20V w/Zener NCH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC86160 | 功能描述:MOSFET 30V 2xNCh Power Clip PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8622 | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。