参数资料
型号: FDMC86324
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 80V 20A POWER33
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 80V
电流 - 连续漏极(Id) @ 25° C: 7A
开态Rds(最大)@ Id, Vgs @ 25° C: 23 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 18nC @ 10V
输入电容 (Ciss) @ Vds: 965pF @ 50V
功率 - 最大: 2.3W
安装类型: 表面贴装
封装/外壳: 8-PowerWDFN
供应商设备封装: Power33
包装: 标准包装
其它名称: FDMC86324DKR
Typical Characteristics T J = 25 °C unless otherwise noted
30
25
20
V GS = 10 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 5.5 V
5
4
3
V GS = 4.5 V
V GS = 5 V
15
V GS = 6 V
V GS = 5 V
2
V GS = 5.5 V
10
5
V GS = 4.5 V
1
PULSE DURATION = 80 μ s
V GS = 6 V
V GS = 10 V
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
5
10
15
20
25
30
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
1.8
I D = 7 A
V GS = 10 V
80
70
I D = 7 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
60
50
40
30
20
T J = 125 o C
T J = 25 o C
0.6
-75
-50
-25
0
25
50
75
100 125 150
10
4
5
6
7
8
9
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
30
25
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
60
10
V GS = 0 V
V DS = 5 V
20
1
T J = 150 o C
15
10
T J = 150 o C
0.1
T J = 25 o C
5
T J = 25 o C
0.01
T J = -55 o C
T J = -55 o C
0
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMC86324 Rev.C
3
www.fairchildsemi.com
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