参数资料
型号: FDMS2506SDC
厂商: Fairchild Semiconductor
文件页数: 3/9页
文件大小: 0K
描述: MOSFET N-CH 25V 39A POWER56
标准包装: 1
系列: Dual Cool™, PowerTrench®, SyncFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 39A
开态Rds(最大)@ Id, Vgs @ 25° C: 1.45 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 3V @ 1mA
闸电荷(Qg) @ Vgs: 93nC @ 10V
输入电容 (Ciss) @ Vds: 5945pF @ 13V
功率 - 最大: 3.3W
安装类型: 表面贴装
封装/外壳: 8-PQFN,Power56
供应商设备封装: Power56
包装: 标准包装
其它名称: FDMS2506SDCDKR
Thermal Characteristics
R θ JC
R θ JC
R θ JA
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
2.7
1.4
38
81
27
34
R θ JA
R θ JA
R θ JA
R θ JA
R θ JA
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1e)
(Note 1f)
(Note 1g)
(Note 1h)
(Note 1i)
(Note 1j)
(Note 1k)
(Note 1l)
16
19
26
61
16
23
11
13
°C/W
NOTES:
1. R θ JA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R θ JC is guaranteed by design while R θ CA is determined
by the user's board design.
a. 38 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in 2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in 2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in 2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in 2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in 2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. E AS of 220 mJ is based on starting T J = 25 ° C, L = 1 mH, I AS = 21 A, V DD = 23 V, V GS = 10 V. 100% test at L = 0.3 mH, I AS = 32 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
5. I SD ≤ 30 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , Starting T J = 25 o C.
?2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C1
3
www.fairchildsemi.com
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