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| 型号： | FDMS6673BZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 15.2A POWER56 |
| 产品变化通告： | Power 56 Pkg/Design Change 14/Apr/2009 |
| 产品目录绘图： | Power56 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.8 毫欧 @ 15.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5915pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMS6673BZDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 A, V GS = 0 V
I D = -250 A, referenced to 25 °C
V DS = -24 V, V GS = 0 V
V GS = ±25 V, V DS = 0 V
-30
-18
-1
±10
V
mV/°C
A
A
On Characteristics
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 A
I D = -250 A, referenced to 25 °C
-1.0
-1.8
7
-3.0
V
mV/°C
V GS = -10 V, I D = -15.2 A
5.2
6.8
r DS(on)
Static Drain to Source On Resistance
V GS = -4.5 V, I D = -11.2 A
7.8
12.5
m
V GS = -10 V, I D = -15.2 A, T J = 125 °C
7.5
9.8
g FS
Forward Transconductance
V DS = -5 V, I D = -15.2 A
76
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -15 V, V GS = 0 V,
f = 1 MHz
4444
781
695
5915
1040
1045
pF
pF
pF
R g
Gate Resistance
4.5
Switching Characteristics
t d(on)
Turn-On Delay Time
14
26
ns
t r
t d(off)
t f
Q g
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = -15 V, I D = -15.2 A,
V GS = -10 V, R GEN = 6
V GS = 0 V to -10 V
28
97
79
93
45
156
127
130
ns
ns
ns
nC
Q g
Q gs
Total Gate Charge
Gate to Source Charge
V GS = 0 V to -5 V
V DD = -15 V,
I D = -15.2 A
52
13
73
nC
nC
Q gd
Gate to Drain “Miller” Charge
26
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = -2.1 A
V GS = 0 V, I S = -15.2 A
(Note 2)
(Note 2)
0.7
0.8
1.20
1.25
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = -15.2 A, di/dt = 100 A/ s
33
20
53
32
ns
nC
Notes :
1: R JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
JC
is guaranteed by design while R
CA is
determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
3: The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
?2009 Fairchild Semiconductor Corporation
FDMS6673BZ Rev C3
2
www.fairchildsemi.com
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| FDMS6682Z | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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| FDMS7558S | 功能描述:MOSFET 25V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7560S | 功能描述:MOSFET 25V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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