参数资料
型号: FDMS6681Z
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET P-CH 30V 21.1A POWER56
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Power 56 Pkg/Design Change 14/Apr/2009
产品目录绘图: Power56 Single
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 21.1A
开态Rds(最大)@ Id, Vgs @ 25° C: 3.2 毫欧 @ 22.1A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 241nC @ 10V
输入电容 (Ciss) @ Vds: 10380pF @ 15V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-PQFN,Power56
供应商设备封装: Power56
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMS6681ZDKR
Typical Characteristics T J = 25 °C unless otherwise noted
90
5
75
60
V GS = -3.5 V
V GS = -4 V
V GS = -4.5 V
4
V GS = -3 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V GS = -3.5 V
45
V GS = -10V
3
2
V GS = -4.5 V
V GS = -4 V
30
15
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V GS = -3 V
1
V GS = -10 V
0
0
1
2
3
0
0
15
30
45
60
75
90
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.6
-I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
12
1.4
I D = -22.1 A
V GS = -10 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
9
I D = -22.1 A
1.2
6
1.0
T J = 125 o C
0.8
3
T J = 25 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
0
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
90
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
75
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
10
V GS = 0 V
V DS = -5 V
60
T J = 150 o C
45
T J =
150 o C
1
T J = 25 o C
0.1
30
15
T J = 25 o C
T J
= -55 o C
0.01
T J = -55 o C
0
0.001
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2009 Fairchild Semiconductor Corporation
FDMS6681Z Rev.C4
3
www.fairchildsemi.com
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