参数资料
型号: FDMS7650DC
厂商: Fairchild Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 30V 47A POWER56
标准包装: 1
系列: Dual Cool™, PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 47A
开态Rds(最大)@ Id, Vgs @ 25° C: 0.99 毫欧 @ 36A,10V
Id 时的 Vgs(th)(最大): 2.7V @ 250µA
闸电荷(Qg) @ Vgs: 206nC @ 10V
输入电容 (Ciss) @ Vds: 14765pF @ 15V
功率 - 最大: 3.3W
安装类型: 表面贴装
封装/外壳: 8-PowerTDFN
供应商设备封装: Power56
包装: 标准包装
其它名称: FDMS7650DCDKR
FDMS7650 DC
N-Channel Dual Cool TM PowerTrench ? MOSFET
30 V, 100 A, 0.99 m Ω
July 2013
Dual Cool
Top Side Cooling PQFN package
Features
TM
Max r DS(on) = 0.99 m Ω at V GS = 10 V, I D = 36 A
Max r DS(on) = 1.55 m Ω at V GS = 4.5 V, I D = 32 A
High performance technology for extremely low r DS(on)
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process.
Advancements in both silicon and Dual Cool TM package
technologies have been combined to offer the lowest r DS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation
Pin 1
S
S
S
D
5
4
G
G
D
6
3
S
D
D
D
D
D
D
7
8
2
1
S
S
Top
Power 56
Bottom
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
V GS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25 °C
(Note 4)
±20
100
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25 °C
T A = 25 °C
(Note 1a)
289
47
A
-Pulsed
200
E AS
dv/dt
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
(Note 3)
(Note 5)
578
0.5
mJ
V/ns
P D
Power Dissipation
Power Dissipation
T C = 25 °C
T A = 25 °C
(Note 1a)
125
3.3
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Top Source)
(Bottom Drain)
(Note 1a)
2.3
1
38
R θ JA
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
81
16
23
11
°C/W
Package Marking and Ordering Information
Device Marking
7650
Device
FDMS7650DC
Package
Dual Cool TM Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C4
1
www.fairchildsemi.com
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