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参数资料
| 型号： | FDMS7650DC |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 47A POWER56 |
| 标准包装： | 1 |
| 系列： | Dual Cool™, PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 47A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 0.99 毫欧 @ 36A，10V |
| Id 时的 Vgs(th)（最大）： | 2.7V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 206nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 14765pF @ 15V |
| 功率 - 最大： | 3.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS7650DCDKR |
Thermal Characteristics
R θ JC
R θ JC
R θ JA
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
2.3
1
38
81
27
34
R θ JA
R θ JA
R θ JA
R θ JA
R θ JA
R θ JA
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1e)
(Note 1f)
(Note 1g)
(Note 1h)
(Note 1i)
(Note 1j)
(Note 1k)
(Note 1l)
16
19
26
61
16
23
11
13
°C/W
NOTES:
1. R θ JA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R θ JC is guaranteed by design while R θ CA is determined
by the user's board design.
a. 38 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in 2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in 2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in 2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in 2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in 2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. E AS of 578 mJ is based on starting T J = 25 o C; N-ch: L = 1 mH, I AS = 34 A, V DD = 27 V, V GS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
5. I SD ≤ 36 A, di/dt ≤ 100 A/ μ s, V DD ≤ BV DSS , Starting T J = 25 o C.
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
?2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C4
3
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS7650 | MOSFET N-CH 30V POWER56 |
| FDMS7656AS | MOSFET N-CH 30V POWER56 |
| FDMS7658AS | MOSFET N-CH 30V POWER56 |
| FDMS7660AS | MOSFET N-CH 30V PWRSTAGE POWER56 |
| FDMS7660 | MOSFET N-CH 30V 25A POWER56 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS7656AS | 功能描述:MOSFET PT7 30/20V Nch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7658AS | 功能描述:MOSFET PT7 30/20V Nch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7660 | 功能描述:MOSFET 30/20V Nch Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7660AS | 功能描述:MOSFET PT7 30/20V Nch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7670 | 功能描述:MOSFET 30V 42A N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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