- 您现在的位置：买卖IC网 > Datasheet目录422 > FDMS7670AS (Fairchild Semiconductor)MOSFET N-CH 30V SYNCFET POWER56 Datasheet资料下载
参数资料
| 型号： | FDMS7670AS |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V SYNCFET POWER56 |
| 标准包装： | 1 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 22A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 毫欧 @ 21A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 66nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4225pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 标准包装 |
| 其它名称： | FDMS7670ASFSDKR |
Electrical Characteristics T A = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
I D = 1 mA, V GS = 0 V
I D = 10 mA, referenced to 25 °C
V DS = 24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
30
14
500
100
V
mV /° C
A
nA
On Characteristics (Note 2)
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 1 mA
I D = 10 mA, referenced to 25 °C
1.2
1.6
-5
3.0
V
mV/°C
V GS = 10 V, I D = 21 A
2.4
3.0
r DS(on)
Static Drain to Source On Resistance
V GS = 7 V, I D = 19 A
V GS = 4.5 V, I D = 17 A
2.5
3.0
3.2
3.5
m
V GS = 10 V, I D = 21 A, T J = 125 °C
3.0
3.8
g FS
Forward Transconductance
V DS = 5 V, I D = 21 A
300
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1 MHz
3175
1175
110
1.3
4225
1565
165
2.6
pF
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
14
25
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 21 A,
V GS = 10 V, R GEN = 6
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 15 V,
I D = 21 A
6
35
5
47
22
8.5
4.9
12
56
10
66
31
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 2 A
V GS = 0 V, I S = 21 A
(Note 2)
(Note 2)
0.43
0.75
0.7
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 21 A, di/dt = 300 A/ s
35
41
56
67
ns
nC
Notes :
1. R JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
JC
is guaranteed by design while R
CA is
determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 30 0 s, Duty cycle < 2.0%.
3. E AS of 98 mJ is based on starting T J = 25 ° C, L = 1 mH, I AS = 14 A, V DD = 27 V, V GS = 10 V. 100% test at L = 0.3 mH, I AS = 21 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7670AS Rev.C1
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMS7670 | MOSFET N-CH 30V 21A POWER56 |
| FDMS7672AS | MOSFET N-CH 30V SYNCFET POWER56 |
| FDMS7672 | MOSFET N-CH 30V 19A POWER56 |
| FDMS7676 | MOSFET N-CH 30V POWER56 |
| FDMS7682 | MOSFET N-CH 30V 22A POWER56 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMS7672 | 功能描述:MOSFET 30V 28A N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7672AS | 功能描述:MOSFET PT7 30/20V Nch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7676 | 功能描述:MOSFET 30/20V N-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7678 | 功能描述:MOSFET 30V/20V N-Ch PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMS7680 | 功能描述:MOSFET 30/20V Nch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。