参数资料
型号: FDMS86101
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 100V 12.4A POWER56
产品变化通告: Power 56 Pkg/Design Change 14/Apr/2009
产品目录绘图: Power56 Single
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 12.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 8 毫欧 @ 13A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 55nC @ 10V
输入电容 (Ciss) @ Vds: 3000pF @ 50V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-PQFN,Power56
供应商设备封装: Power56
包装: 标准包装
产品目录页面: 1608 (CN2011-ZH PDF)
其它名称: FDMS86101DKR
Typical Characteristics T J = 25 °C unless otherwise noted
200
5
V GS = 10 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 4.5 V
150
V GS = 6 V
4
V GS = 5 V
3
100
V GS = 5.5 V
2
V GS = 5.5 V
50
V GS = 5 V
V GS = 4.5 V
1
V GS = 6 V
PULSE DURATION = 80 μ s
V GS = 10 V
DUTY CYCLE = 0.5% MAX
0
0
0
1
2
3
4
5
0
50 100
150
200
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
2.0
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
40
1.8
1.6
I D = 13 A
V GS = 10 V
30
I D = 13 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.4
20
1.2
1.0
0.8
10
T J = 125 o C
T J = 25 o C
0.6
-75
-50
-25
0
25
50
75
100 125 150
0
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
200
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
V GS = 0 V
150
V DS = 5 V
10
100
T J = 150 o C
1
T J = 150 o C
T J = 25 o C
50
T J = 25 o C
0.1
T J = -55 o C
T J = -55 o C
0
0.01
1
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2013 Fairchild Semiconductor Corporation
FDMS86101 Rev . C9
3
www.fairchildsemi.com
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