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| 型号： | FDMS86320 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 80V 10.5A 8-PQFN |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 80V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.7 毫欧 @ 10.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 41nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2640pF @ 40V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（5X6），Power56 |
| 包装： | 带卷 (TR) |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 64 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
80
51
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th )
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
2.4
3.5
-10
4.5
V
mV/°C
V GS = 10 V, I D = 10.5 A
9.6
11.7
r DS(on)
Static Drain to Source On Resistance
V GS = 8 V, I D = 8.5 A
11
15
m Ω
V GS = 10 V, I D = 10.5 A, T J = 125 °C
15
19
g FS
Forward Transconductance
V DS = 10 V, I D = 10.5 A
23
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 40 V, V GS = 0 V,
f = 1 MHz
0.1
1985
353
12
0.5
2640
469
30
2
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
15
28
ns
t r
t d(off)
t f
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 40 V, I D = 10.5 A,
V GS = 10 V, R GEN = 6 Ω
8
20
5
16
35
10
ns
ns
ns
Q g(TOT)
Q g(TOT)
Q gs
Total Gate Charge
Total Gate Charge
Total Gate Charge
V GS = 0 V to 10 V
V GS = 0 V to 8 V
V DD = 40 V,
I D = 10.5 A
29
24
10
41
34
nC
nC
nC
Q gd
Gate to Drain “Miller” Charge
6.9
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 10.5 A
V GS = 0 V, I S = 2 A
I F = 10.5 A, di/dt = 100 A/ μ s
(Note 2)
(Note 2)
0.84
0.75
38
27
1.3
1.2
61
43
V
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. Starting T J = 25 ° C; N-ch: L = 0.3 mH, I AS = 20 A, V DD = 72 V, V GS = 10 V.
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
FDMS86320 Rev . C1
2
www.fairchildsemi.com
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