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| 型号： | FDN337N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.2A SSOT3 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 2.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 10V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDN337NDKR |
March 1998
FDN337N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
SuperSOT -3 N-Channel logic level enhancement mode
General Description
TM
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited for
low voltage applications in notebook computers, portable
phones, PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are needed
in a very small outline surface mount package.
Features
2.2 A, 30 V, R DS(ON) = 0.065 ? @ V GS = 4.5 V
R DS(ON) = 0.082 ? @ V GS = 2.5 V.
Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT TM -3 design for
superior thermal and electrical capabilities.
High density cell design for extremely low R DS(ON) .
Exceptional on-resistance and maximum DC current
capability.
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
D
3
37
S
D
SuperSOT -3
TM
G
G
S
Absolute Maximum Ratings
T A = 25 o C unless other wise noted
Symbol
V DSS
V GSS
I D
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain/Output Current - Continuous
- Pulsed
FDN337N
30
±8
2.2
10
Units
V
V
A
P D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
? 1998 Fairchild Semiconductor Corporation
FDN337N Rev.C
相关PDF资料 |
PDF描述 |
|---|---|
| FDN338P | MOSFET P-CH 20V 1.6A SSOT3 |
| FDN339AN | MOSFET N-CH 20V 3A SSOT3 |
| FDN340P | MOSFET P-CH 20V 2A SSOT3 |
| FDN342P | MOSFET P-CH 20V 2A SSOT-3 |
| FDN352AP | MOSFET P-CH 30V 1.3A SSOT-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN337N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN337N_G | 制造商:Fairchild 功能描述:30V/20A MOSFET SOT-3 (Halogen free) |
| FDN337N_Q | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN337N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN337 Series 30 V 65 mOhm N-Ch Field Effect Transistor - SSOT-3 |
| FDN337NX | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel 30V 2.2A SuperSOT3 |
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