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| 型号： | FDN339AN |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3A SSOT3 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Wire Bonding Change 07/Nov/2008 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 700pF @ 10V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | FDN339ANDKR |
Electrical Characteristics
T A = 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
V GS = 0 V, I D = 250 μ A
I D = 250 μ A,Referenced to 25 ° C
V DS = 16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
20
14
1
100
V
mV/ ° C
μ A
nA
Forward
I GSSR
Gate-Body Leakage Current,
V GS = -8 V, V DS = 0 V
-100
nA
Reverse
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V DS = V GS , I D = 250 μ A
I D = 250 μ A,Referenced to 25 ° C
V GS = 4.5 V, I D = 3 A
V GS = 4.5 V, I D = 3 A, T J =125 ° C
0.4
0.85
-3
0.029
0.040
1.5
0.035
0.061
V
mV/ ° C
?
V GS = 2.5 V, I D = 2.4 A
0.039
0.050
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 3 A
10
11
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
700
175
85
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 ?
V DS = 10 V, I D = 3 A,
V GS = 4.5 V
8
10
18
5
7
1.2
1.9
16
18
29
10
10
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
V SD
Drain-Source Diode Forward Voltage V GS = 0 V, I S = 0.42 A
(Note
0.65
1.2
V
Notes:
2)
1: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 250 ° C/W when
mounted on a 0.02 in 2
b) 270 ° C/W on a minimum
mounting pad of 2 oz. Cu.
Pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDN339AN Rev. C
相关PDF资料 |
PDF描述 |
|---|---|
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| FDN342P | MOSFET P-CH 20V 2A SSOT-3 |
| FDN352AP | MOSFET P-CH 30V 1.3A SSOT-3 |
| FDN357N | MOSFET N-CH 30V 1.9A SSOT3 |
| FDN358P | MOSFET P-CH 30V 1.5A SSOT3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN339AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDN339AN | 制造商:Fairchild Semiconductor Corporation 功能描述:20V N-CH. FET 40 MO SSOT3 :ROHS COMPL |
| FDN339AN-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN339AN Series 20 V 35 mOhm N-Channel 2.5V Specified PowerTrench Mosfet |
| FDN340 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel, Logic Level, PowerTrench MOSFET |
| FDN3400 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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