参数资料
型号: FDN339AN
厂商: Fairchild Semiconductor
文件页数: 4/5页
文件大小: 0K
描述: MOSFET N-CH 20V 3A SSOT3
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Wire Bonding Change 07/Nov/2008
Mold Compound Change 08/April/2008
产品目录绘图: SuperSOT-3, SOT-23
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3A
开态Rds(最大)@ Id, Vgs @ 25° C: 35 毫欧 @ 3A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 10nC @ 4.5V
输入电容 (Ciss) @ Vds: 700pF @ 10V
功率 - 最大: 460mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: 3-SSOT
包装: 标准包装
产品目录页面: 1602 (CN2011-ZH PDF)
其它名称: FDN339ANDKR
Typical Characteristics
5
(continued)
1000
I D = 3A
V DS = 5V
10V
f = 1MHz
V GS = 0 V
4
3
2
15V
800
600
400
C ISS
1
0
200
0
C OSS
C RSS
0
2
4
6
8
10
0
4
8
12
16
20
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
20
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
SINGLE PULSE
R θ JA =270 C/W
T A =25 C
10
R DS(ON) LIMIT
1ms
16
o
o
10ms
100ms
12
1
1s
V GS = 4.5V
10s
DC
8
R θ JA = 270 C/W
TA = 25 C
0.1
0.01
SINGLE PULSE
o
o
4
0
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
D = 0.5
0.2
0.1
0.05
0.02
0.2
0.1
0.05
0.02
0.01
R θ JA (t) = r(t) * R θ JA
R θ JA = 270 ° C/W
P(pk)
0.01
Single Pulse
t 1
t 2
0.005
0.002
0.001
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 /t 2
0.0001
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDN339AN Rev. C
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