- 您现在的位置：买卖IC网 > PDF目录375778 > FDN357N (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level Enhancement Mode Field Effect Transistor PDF资料下载
参数资料
| 型号： | FDN357N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 1900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 84K |
| 代理商： | FDN357N |
FDN357N Rev.C
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 10V
6.0
4.5
4.0
3.0
3.5
5.0
0
2
4
6
8
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
I , DRAIN CURRENT (A)
D
V =3.5V
R
D
5.0
7.0
6.0
4.5
4.0
10
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = 4.5V
I = 1.9A
Figure 3. On-Resistance Variation
with Temperature
.
1
2
3
4
5
6
0
2
4
6
8
10
12
14
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = 10V
T = -55°C
125°C
25°C
Figure 5. Transfer Characteristics.
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
10
I
S
25°C
-55°C
V = 0V
J
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
2
4
6
8
10
0
0.05
0.1
0.15
0.2
0.25
V ,GATE TO SOURCE VOLTAGE (V)
R
D
I =0.95A
T = 25°C
T = 125°C
A
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
相关PDF资料 |
PDF描述 |
|---|---|
| FDN358 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN358P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN359BN | N-Channel Logic Level PowerTrench TM MOSFET |
| FDN359 | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN359AN | N-Channel Logic Level PowerTrenchTM MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN357N | 制造商:Fairchild Semiconductor Corporation 功能描述:30V N-CH. FET 60 MO SSOT3 |
| FDN357N_Q | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN358 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN358P | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。