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参数资料
| 型号： | FDN359 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | N沟道MOSFET的逻辑电平PowerTrenchTM |
| 文件页数： | 2/8页 |
| 文件大小： | 264K |
| 代理商： | FDN359 |
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
23
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μA
T
J
= 55°C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note)
Gate - Body Leakage, Forward
V
GS
= 20 V,V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
1
1.6
3
V
Gate Threshold Voltage Temp. Coefficient
-4
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 2.7 A
0.037
0.046
T
J
=125°C
0.055
0.075
V
GS
= 4.5 V, I
D
= 2.4 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 2.7 A
0.049
0.06
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
15
A
Forward Transconductance
9.5
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note)
t
D(on)
Turn - On Delay Time
t
r
Turn - On Rise Time
t
D(off)
Turn - Off Delay Time
t
f
Turn - Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
480
pF
Output Capacitance
120
pF
Reverse Transfer Capacitance
45
pF
V
DD
= 5 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
6
12
ns
13
24
ns
15
27
ns
4
10
ns
V
DS
= 10 V, I
D
= 2.7 A,
V
GS
= 5 V
5
7
nC
1.4
nC
1.6
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.42 A
(Note)
0.65
1.2
V
Note:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Typical R
θ
JA
using the board layouts shown below on FR-4 PCB in a still air environment :
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDN359AN Rev.C
a. 250
o
C/W when mounted on
a 0.02 in
2
pad of 2oz Cu.
b. 270
o
C/W when mounted on
a minimum pad.
相关PDF资料 |
PDF描述 |
|---|---|
| FDN359AN | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN360 | Single P-Channel PowerTrenchTM MOSFET |
| FDN360P | Single P-Channel PowerTrenchTM MOSFET |
| FDN361BN | 30V N-Channel, Logic Level, PowerTrench MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN359AN | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN359AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN359AN-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN359AN Series 30 V 0.046 Ohm N-Channel Logic Level PowerTrench Mosfet SSOT-3 |
| FDN359BN | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN359BN"F095 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 0.026OHM 2.7A SUPER 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 0.026OHM, 2.7A, SUPER |
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