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参数资料
| 型号： | FDN359 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | N沟道MOSFET的逻辑电平PowerTrenchTM |
| 文件页数： | 4/8页 |
| 文件大小： | 264K |
| 代理商： | FDN359 |
FDN359AN Rev.C
0
2
4
6
8
10
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 2.7A
10V
15V
V = 5V
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20 30
50
0.01
0.03
0.1
0.3
1
3
10
30
I
D
RDS(ON) LIMIT
V = 10V
SINGLE PULSE
R =270°C/W
T = 25°C
A
DC
1s
10ms
100ms
10s
1ms
0
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R =270° C/W
T = 25°C
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270 °C/W
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1b.
Transient thermal response will change depending on the circuit board design.
0.1
0.2
0.5
1
2
5
10
30
20
50
100
200
500
1000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
相关PDF资料 |
PDF描述 |
|---|---|
| FDN359AN | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN360 | Single P-Channel PowerTrenchTM MOSFET |
| FDN360P | Single P-Channel PowerTrenchTM MOSFET |
| FDN361BN | 30V N-Channel, Logic Level, PowerTrench MOSFET |
| FDN361 | N-Channel, Logic Level, PowerTrenchビヌ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN359AN | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN359AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN359AN-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN359AN Series 30 V 0.046 Ohm N-Channel Logic Level PowerTrench Mosfet SSOT-3 |
| FDN359BN | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN359BN"F095 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 0.026OHM 2.7A SUPER 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 0.026OHM, 2.7A, SUPER |
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