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参数资料
| 型号： | FDN359 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | N沟道MOSFET的逻辑电平PowerTrenchTM |
| 文件页数： | 3/8页 |
| 文件大小： | 264K |
| 代理商： | FDN359 |
FDN359AN Rev.C
0
0.5
1
1.5
2
2.5
0
2
4
6
8
10
12
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 10V
3.5V
3.0V
2.5V
6.0V
4.5V
0
2
4
6
8
10
12
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
V = 3.0V
3.5V
6.0V
4.5V
10V
4.0V
R
D
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = 10 V
I = 2.7 A
R
D
Figure 3. On-Resistance Variation
with Temperature
.
1
2
3
4
5
0
3
6
9
12
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 5V
T = -55°C
Figure 5. Transfer Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
15
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
A
25°C
-55°C
V = 0V
0
2
4
6
8
10
0
0.03
0.06
0.09
0.12
0.15
V , GATE TO SOURCE VOLTAGE (V)
R
D
T = 25°C
I = 1.3A
T = 125°C
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
相关PDF资料 |
PDF描述 |
|---|---|
| FDN359AN | N-Channel Logic Level PowerTrenchTM MOSFET |
| FDN360 | Single P-Channel PowerTrenchTM MOSFET |
| FDN360P | Single P-Channel PowerTrenchTM MOSFET |
| FDN361BN | 30V N-Channel, Logic Level, PowerTrench MOSFET |
| FDN361 | N-Channel, Logic Level, PowerTrenchビヌ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN359AN | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN359AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN359AN-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN359AN Series 30 V 0.046 Ohm N-Channel Logic Level PowerTrench Mosfet SSOT-3 |
| FDN359BN | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN359BN"F095 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 0.026OHM 2.7A SUPER 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 0.026OHM, 2.7A, SUPER |
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