- 您现在的位置：买卖IC网 > PDF目录375778 > FDN360P (FAIRCHILD SEMICONDUCTOR CORP) Single P-Channel PowerTrenchTM MOSFET PDF资料下载
参数资料
| 型号： | FDN360P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Single P-Channel PowerTrenchTM MOSFET |
| 中文描述： | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 231K |
| 代理商： | FDN360P |
F
FDN360P Rev. D
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current,
Forward
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to
25
°
C
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
-30
V
Breakdown Voltage Temperature
20
mV/
°
C
-1
100
μ
A
nA
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to
25
°
C
V
GS
= -10 V, I
D
= -2 A
V
GS
= -10 V, I
D
= -2 A, T
J
=125
°
C
V
GS
= -4.5 V, I
D
= -1.5 A
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -2 A
-1
-1.8
-4
-3
V
Gate Threshold Voltage
mV/
°
C
0.060
0.080
0.095
0.080
0.136
0.125
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-20
A
S
5.5
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
420
140
60
pF
pF
pF
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
9
8
18
6
5
1.7
1.8
18
16
29
12
7
ns
ns
ns
ns
nC
nC
nC
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
V
DS
= -15 V, I
D
= -2 A,
V
GS
= -10 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
-0.42
-1.2
A
V
V
GS
= 0 V, I
S
= -0.42 A
(Note 2)
-0.75
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 250
°
C/W when
mounted on a 0.02 in
2
Pad of 2 oz. Cu.
b) 270
°
C/W when
mounted on a 0.001 in
2
pad of 2 oz. Cu.
相关PDF资料 |
PDF描述 |
|---|---|
| FDN361BN | 30V N-Channel, Logic Level, PowerTrench MOSFET |
| FDN361 | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN371N | 30V N-Channel PowerTrench MOSFET |
| FDN372S | 30V N-Channel PowerTrench剖 SyncFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN360P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN360P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN360P Series 30 V 80 mOhm Single P-Channel PowerTrench Mosfet - SSOT-3 |
| FDN361 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN361AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
发布紧急采购，3分钟左右您将得到回复。