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参数资料
| 型号： | FDP036N10A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V TO-220AB-3 |
| 标准包装： | 400 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.6 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 116nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7295pF @ 25V |
| 功率 - 最大： | 227W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 成形引线 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
Package Marking and Ordering Information
Part Number
FDP036N10A
Top Mark
FDP036N10A
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V, T C = 25 o C
o
V DS = 80 V, V GS = 0 V
V DS = 80 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
100
-
-
-
-
-
0.03
-
-
-
-
-
1
500
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 75 A
V DS = 10 V, I D = 75 A
2.0
-
-
3.0
3.2
167
4.0
3.6
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Q gs
Q gs2
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 25 V, V GS = 0 V,
f = 1 MHz
V DS = 80 V, I D = 75 A,
V GS = 10 V
f = 1 MHz
(Note 4)
-
-
-
-
-
-
-
-
5485
2430
210
89
24
8
25
1.2
7295
3230
315
116
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 50 V, I D = 75 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
22
54
37
11
54
118
84
32
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
214
856
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 75 A
V GS = 0 V, I SD = 75 A,
dI F /dt = 100 A/ μ s
-
-
-
-
72
129
1.25
93.6
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting T J = 25 ° C, L = 1 mH, I AS = 36.3 A.
3. I SD ≤ 75 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2010 Fairchild Semiconductor Corporation
FDP036N10A Rev. C1
2
www.fairchildsemi.com
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