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参数资料
| 型号： | FDP15N65 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 650V 15A TO-220 |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 650V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 440 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 63nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3095pF @ 25V |
| 功率 - 最大： | 250W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
November 2013
FDPF15N65
N-Channel UniFET TM MOSFET
650 V, 15 A, 440 m Ω
Features
? R DS(on) = 360 m Ω (Typ.) @ V GS = 10 V, I D = 7.5 A
? Low Gate Charge (Typ. 48.5 nC)
? Low C rss (Typ. 23.6 pF)
? 100% Avalanche Tested
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? LCD/LED/PDP TV and Monitor
? Uninterruptible Power Supply
D
D
G
S
Absolute Maximum Ratings
TO-220F
T C = 25°C unless otherwise noted.
G
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FDPF15N65
650
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
15*
9.5*
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
60*
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
637
15
25.0
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
38.5
0.3
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDPF15N65
3.3
62.5
Unit
° C/W
?2006 Fairchild Semiconductor Corporation
FDPF15N65 Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP15N65_0610 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:650V N-Channel MOSFET |
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| FDP16G | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP16N50 | 功能描述:MOSFET 500V 16A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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