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参数资料
| 型号： | FDP16AN08A0 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 75V, 58A, 16mз |
| 中文描述： | 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 2/11页 |
| 文件大小： | 267K |
| 代理商： | FDP16AN08A0 |
2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain
“
Miller
”
Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 260
μ
H, I
AS
= 30A.
Device Marking
FDB16AN08A0
FDP16AN08A0
Device
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
FDB16AN08A0
FDP16AN08A0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 60V
V
GS
= 0V
V
GS
=
±
20V
75
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 58A, V
GS
= 10V
I
D
= 29A, V
GS
= 6V
I
D
= 58A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.013
0.019
0.016
0.029
-
0.032
0.037
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
1857
288
88
28
3.5
11
7.6
6.4
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 40V
I
D
= 58A
I
g
= 1.0mA
42
5
-
-
-
-
-
-
-
V
DD
= 40V, I
D
= 58A
V
GS
= 10V, R
GS
= 10
-
-
-
-
-
-
-
8
135
-
-
-
-
86
ns
ns
ns
ns
ns
ns
82
28
30
-
V
SD
Source to Drain Diode Voltage
I
SD
= 58A
I
SD
= 29A
I
SD
= 58A, dI
SD
/dt = 100A/
μ
s
I
SD
= 58A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
35
36
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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