参数资料
型号: FDP16AN08A0
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel PowerTrench MOSFET 75V, 58A, 16mз
中文描述: 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 5/11页
文件大小: 267K
代理商: FDP16AN08A0
2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
F
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
V
GS
= V
DS
, I
D
= 250
μ
A
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
0.9
1.0
1.1
-80
-40
0
40
80
120
160
200
1.2
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
100
1000
0.1
1
10
3000
75
50
0
2
4
6
8
10
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 40V
I
D
= 58A
I
D
= 28A
WAVEFORMS IN
DESCENDING ORDER:
0
5
10
15
20
25
30
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