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参数资料
| 型号： | FDP26N40 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 26A TO-220 |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 26A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3185pF @ 25V |
| 功率 - 最大： | 265W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
November 2013
FDP26N40
N-Channel UniFET TM MOSFET
400 V, 26 A, 160 m Ω
Features
? R DS(on) = 130 m Ω (Typ.) @ V GS = 10 V, I D = 13 A
? Low Gate Charge (Typ. 48 nC)
? Low C rss (Typ. 30 pF)
? 100% Avalanche Tested
? RoHS Compliant
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Applications
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
TO-220
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDP26N40
400
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
26
15.6
V
A
I DM
Drain Current
- Pulsed
(Note 1)
104
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1352
26
26.5
4.5
265
2.0
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FDP26N40
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.5
62.5
o
C/W
?2008 Fairchild Semiconductor Corporation
FDP26N40 Rev. C1
1
www.fairchildsemi.com
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