- 您现在的位置：买卖IC网 > Datasheet目录424 > FDP26N40 (Fairchild Semiconductor)MOSFET N-CH 400V 26A TO-220 Datasheet资料下载
参数资料
| 型号： | FDP26N40 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 26A TO-220 |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 26A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3185pF @ 25V |
| 功率 - 最大： | 265W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
Package Marking and Ordering Information
Part Number
FDP26N40
Top Mark
FDP26N40
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V, T J = 25 o C
400
-
-
V
Δ BV DSS
/ Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 400 V, V GS = 0 V
V DS = 320 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
25 o C
-
-
-
-
0.5
-
-
-
-
1
10
±100
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 13 A
V DS = 20 V, I D = 13 A
3.0
-
-
-
0.13
25.5
5.0
0.16
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
-
-
-
2400
390
30
3185
520
45
pF
pF
pF
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 320 V, I D = 26 A,
V GS = 10 V
(Note 4)
-
-
-
48
15
20
60
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 200 V, I D = 26 A,
V GS = 10 V, R G = 25 Ω
(Note 4)
-
-
-
-
45
100
115
66
100
210
240
140
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
26
104
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 26 A
V GS = 0 V, I SD = 26 A,
dI F /dt = 100 A/ μ s
-
-
-
-
406
5.17
1.4
-
-
V
ns
μ C
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 4 mH, I AS = 26 A, V DD = 50 V, R G = 25 Ω , starting T J = 25°C.
3: I SD ≤ 26 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25°C.
4: Essentially independent of operating temperature typical characteristics.
?2008 Fairchild Semiconductor Corporation
FDP26N40 Rev. C1
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDP2710 | MOSFET N-CH 250V 50A TO-220 |
| FDP33N25 | MOSFET N-CH 250V 33A TO-220 |
| FDP3651U | MOSFET N-CH 100V 80A TO-220AB |
| FDP3672 | MOSFET N-CH 105V 41A TO-220AB |
| FDP3682 | MOSFET N-CH 100V 32A TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP2710 | 功能描述:MOSFET 250V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP2710_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 250V, 50A, 47m?? |
| FDP2710_F085 | 功能描述:MOSFET 250V NCHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP28G | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP28T | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
发布紧急采购，3分钟左右您将得到回复。