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参数资料
| 型号： | FDP46N30 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | DC-DC Converter; Supply Voltage:75V; Output Voltage:5V; Number of Outputs:1; Mounting Type:PC Board; Series:BXA; Efficiency:80%; Leaded Process Compatible:Yes; Output Current:5A; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| 中文描述： | 46 A, 300 V, 0.079 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 697K |
| 代理商： | FDP46N30 |
4
www.fairchildsemi.com
FDP46N30 Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
°
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 23 A
R
D
,
D
T
J
, Junction Temperature [
°
C]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
1010 ms
DC
1 ms
10
μ
s
100
μ
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
°
C
2. T
J
= 150
°
C
3. Single Pulse
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
10
20
30
40
50
I
D
,
T
C
, Case Temperature [
°
C]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
* N ote s :
1 . Z
θ
JC
(t) = 0 .3
°
C /W M a x.
2 . D u ty F a cto r, D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
θ
JC
(t)
s in gle p ulse
D = 0.5
0 .02
0 .01
0 .2
0.0 5
0.1
Z
θ
J
(
t
1
, S q u a re W a ve P u lse D u ra tio n [se c]
t
1
P
DM
t
2
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