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参数资料
| 型号： | FDP8443_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V TO-220AB-3 |
| 产品变化通告： | Product Obsolescence 13/Aug/2010 |
| 标准包装： | 400 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 185nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9310pF @ 25V |
| 功率 - 最大： | 188W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 成形引线 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
I D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T C < 144 o C, V GS = 10V)
Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 62 o C/W)
Pulsed
Ratings
40
±20
80
20
See Figure 4
Units
V
V
A
E AS
P D
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25 o C
(Note 1)
531
188
1.25
mJ
W
W/ o C
T J , T STG Operating and Storage Temperature
Thermal Characteristics
-55 to +175
o C
R θ JC
Thermal Resistance Junction to Case
0.8
o C/W
R θ JA
Thermal Resistance Junction to Ambient
(Note 2)
62
o
C/W
Package Marking and Ordering Information
Device Marking
FDP8443
Device
FDP8443 _F085
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
40
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 32V,
V GS = 0V
V GS = ±20V
T C = 150 o C
-
-
-
-
-
-
1
250
±100
μ A
nA
On Characteristics
V GS(th)
r DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 80A, V GS = 10V
I D = 80A, V GS = 10V,
T J = 175 o C
2
-
-
2.8
2.7
4.7
4
3.5
6.1
V
m Ω
Dynamic Characteristics
C iss
C oss
C rss
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0.5V, f = 1MHz
V GS = 0 to 10V
-
-
-
-
-
9310
800
510
0.9
142
-
-
-
-
185
pF
pF
pF
Ω
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
V GS = 0 to 2V
V DD = 20V
I D = 35A
I g = 1mA
-
-
-
-
17.5
36
18.8
32
23
-
-
-
nC
nC
nC
nC
FDP8443 _F085 Rev. A
2
www.fairchildsemi.com
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