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| 型号： | FDP8876 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 70A TO-220 |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 70A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.7 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 15V |
| 功率 - 最大： | 70W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
November 2005
FDP8876
N-Channel PowerTrench ? MOSFET
30V, 71A, 8.5m ?
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r DS(ON) and fast switching speed.
Features
r DS(ON) = 8.5m ? , V GS = 10V, I D = 40A
r DS(ON) = 10.3m ? , V GS = 4.5V, I D = 40A
High performance trench technology for extremely low
r DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
G
D
S
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
±20
Units
V
V
Drain Current
C
I D
E AS
P D
T J , T STG
Continuous (T C = 25 o C, V GS = 10V)
Continuous (T C = 25 o C, V GS = 4.5V)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Operating and Storage Temperature
70
64
Figure 4
180
70
-55 to 175
A
A
A
mJ
W
o
Thermal Characteristics
R θ JC
Thermal Resistance Junction to Case TO-263
2.14
o C/W
R θ JA
Thermal Resistance Junction to Ambient TO-263,1in 2 copper pad area
62
o
C/W
Package Marking and Ordering Information
Device Marking
FDP8876
Device
FDP8876
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
?2005 Fairchild Semiconductor Corporation
FDP8876 Rev. A
1
www.fairchildsemi.com
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| FDP8878 | 功能描述:MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| FDP8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ |
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