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参数资料
| 型号： | FDPC8011S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 0K |
| 描述： | MOSF DL N CH ASYM 25V PWR CLIP33 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 N 沟道（双）非对称型 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A，27A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1240pF @ 13V |
| 功率 - 最大： | 800mW，900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（3.3X3.3），Power33 |
| 包装： | 标准包装 |
| 其它名称： | FDPC8011SFSDKR |
FDPC8011S
PowerTrench ? Power Clip
25V Asymmetric Dual N-Channel MOSFET
September 2012
Features
Q1: N-Channel
Max r DS(on) = 7.3 m Ω at V GS = 4.5 V, I D = 12 A
Q2: N-Channel
Max r DS(on) = 2.1 m Ω at V GS = 4.5 V, I D = 24 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q1) and synchronous
SyncFET TM (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
Pin 1
LS
GND
GND
V+
GND
(LSS
V+
(HSD
SW
SW
SW
Pin 1
HSG
SW
HSG
SW
PAD9
V+(HSD)
PAD10
V+ HSG
LSG SW
GND SW
SW
V+
LSG
GND
Top
3.3 mm x 3.3 mm
Bottom
SW
GND(LSS)
GND SW
GND
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Q1
25
12
Q2
25
12
Units
V
V
Drain Current
-Continuous (Package limited)
T C = 25 °C
20
60
I D
-Continuous
T A = 25 °C
13 1a
27 1b
A
-Pulsed
40
120
E AS
P D
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
(Note 3)
T A = 25 °C
T A = 25 °C
21
1.6 1a
0.8 1c
97
2.0 1b
0.9 1d
mJ
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
77 1a
63 1b
R θ JA
R θ JC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
151 1c
5.0
135 1d
3.5
°C/W
Package Marking and Ordering Information
Device Marking
13OD/15OD
Device
FDPC8011S
Package
Power Clip 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C5
1
www.fairchildsemi.com
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