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参数资料
| 型号： | FDPC8011S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | MOSF DL N CH ASYM 25V PWR CLIP33 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 N 沟道（双）非对称型 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A，27A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1240pF @ 13V |
| 功率 - 最大： | 800mW，900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（3.3X3.3），Power33 |
| 包装： | 标准包装 |
| 其它名称： | FDPC8011SFSDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 13 A
V GS = 0 V, I S = 27 A
Q1
I F = 13 A, di/dt = 100 A/ μ s
Q2
I F = 27 A, di/dt = 300 A/ μ s
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
0.8
0.8
22
30
8
32
1.2
1.2
V
ns
nC
Notes:
1.R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 77 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
c. 151 °C/W when mounted on a
minimum pad of 2 oz copper
b. 63 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
d. 135 °C/W when mounted on a
minimum pad of 2 oz copper
2 Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. Q1 :E AS of 21 mJ is based on starting T J = 25 o C; N-ch: L = 1.2 mH, I AS = 6 A, V DD = 23 V, V GS = 10 V. 100% test at L= 0.1 mH, I AS = 14.5 A.
Q2: E AS of 97 mJ is based on starting T J = 25 o C; N-ch: L = 0.6 mH, I AS = 18 A, V DD = 23 V, V GS = 10 V. 100% test at L= 0.1 mH, I AS = 32.9 A.
?2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C5
3
www.fairchildsemi.com
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