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参数资料
| 型号： | FDPC8011S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/15页 |
| 文件大小： | 0K |
| 描述： | MOSF DL N CH ASYM 25V PWR CLIP33 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 N 沟道（双）非对称型 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A，27A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1240pF @ 13V |
| 功率 - 最大： | 800mW，900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-PQFN（3.3X3.3），Power33 |
| 包装： | 标准包装 |
| 其它名称： | FDPC8011SFSDKR |
Typical Characteristics (Q1 N-Channel) T J = 25 °C unless otherwise noted
40
30
V GS = 10 V
V GS = 4.5 V
V GS = 3.5 V
4.0
3.5
3.0
V GS = 2.5 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 3 V
2.5
20
10
V GS = 2.5 V
2.0
1.5
V GS = 3 V
V GS = 3.5 V
0
0.0
0.3
0.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0.9 1.2
1.5
1.0
0.5
0
10 20
V GS = 4.5 V
30
V GS = 10 V
40
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.6
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
20
1.4
I D = 13 A
V GS = 10 V
16
I D = 13 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
12
1.0
0.8
8
4
T J = 125 o C
T J = 25 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
0
2
3
4
5
6
7
8
9
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On Resistance
vs Junction Temperature
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
40
30
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DS = 5 V
40
10
V GS = 0 V
20
10
T J = 150 o C
T J = 25 o C
1
0.1
T J = 150 o C
T J = 25 o C
T J = -55 o C
T J = -55 o C
0
1.0
1.5
2.0
2.5
3.0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C5
4
www.fairchildsemi.com
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