参数资料
型号: FDPC8011S
厂商: Fairchild Semiconductor
文件页数: 13/15页
文件大小: 0K
描述: MOSF DL N CH ASYM 25V PWR CLIP33
标准包装: 1
系列: PowerTrench®
FET 型: 2 N 沟道(双)非对称型
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 13A,27A
开态Rds(最大)@ Id, Vgs @ 25° C: 6 毫欧 @ 13A,10V
Id 时的 Vgs(th)(最大): 2.2V @ 250µA
闸电荷(Qg) @ Vgs: 19nC @ 10V
输入电容 (Ciss) @ Vds: 1240pF @ 13V
功率 - 最大: 800mW,900mW
安装类型: 表面贴装
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-PQFN(3.3X3.3),Power33
包装: 标准包装
其它名称: FDPC8011SFSDKR
"Use multiple vias in parallel on each copper region to interconnect top, inner and bottom layers. This will reduce resistance and
inductance of the vias and will improve thermal conductivity. Vias should be relatively large, around 8 mils to 10 mils.
"Avoid using narrow thermal relief traces on the V+ / V+(HSD) PAD and GND / GND(LSS)PAD pins. These will increase HF switch
loop inductance. And these will increase ringing of the HF power loop and the SW node.
?2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C5
13
www.fairchildsemi.com
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