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| 型号： | FDP8896 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 92A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 92A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.9 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 67nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2525pF @ 15V |
| 功率 - 最大： | 80W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
N
May 200 8
FDP8896
N-Channel PowerTrench ? MOSFET
30V, 92A, 5.9m ?
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r DS(ON) and fast switching speed.
Applications
tm M
Features
? r DS(ON) = 5.9m ? , V GS = 10V, I D = 35A
? r DS(ON) = 7.0m ? , V GS = 4.5V, I D = 35A
? High performance trench technology for extremely low
r DS(ON)
? Low gate charge
? High power and current handling capability
? DC/DC converters
(FLANGE)
DRAIN
TO-220AB
SOURCE
DRAIN
GATE
?
RoHS Compliant
G
D
S
FDP SERIES
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
± 20
Units
V
V
Drain Current
Continuous (T C = 25 o C, V GS = 10V) (Note 1)
92
A
I D
E AS
P D
T J , T STG
Continuous (T C = 25 o C, V GS = 4.5V) (Note 1)
Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 62 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
85
16
Figure 4
74
80
0.53
-55 to 175
A
A
A
mJ
W
W/ o C
o C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
1.88
62
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDP8896
Device
FDP8896
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
?200 8 Fairchild Semiconductor Corporation
FDP8896 Rev. A 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ |
| FDP8896_F085 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET. (Transferred to alternate site. Please contact local reps fo RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8N50NZ | 功能描述:MOSFET UNIFET2 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8N50NZF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 7A, 1?? |
| FDP8N60ZU | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω |
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