参数资料
型号: FDP8896
厂商: Fairchild Semiconductor
文件页数: 9/10页
文件大小: 0K
描述: MOSFET N-CH 30V 92A TO-220AB
产品培训模块: High Voltage Switches for Power Processing
标准包装: 50
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 92A
开态Rds(最大)@ Id, Vgs @ 25° C: 5.9 毫欧 @ 35A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 67nC @ 10V
输入电容 (Ciss) @ Vds: 2525pF @ 15V
功率 - 最大: 80W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
PSPICE Thermal Model
REV 23 November 2003
FDP8896T
CTHERM1 TH 6 9e-4
CTHERM2 6 5 1e-3
CTHERM3 5 4 2e-3
RTHERM1
th
JUNCTION
CTHERM1
CTHERM4 4 3 3e-3
CTHERM5 3 2 7e-3
CTHERM6 2 TL 8e-2
6
RTHERM1 TH 6 3.0e-2
RTHERM2 6 5 1.0e-1
RTHERM3 5 4 1.8e-1
RTHERM4 4 3 2.8e-1
RTHERM2
CTHERM2
RTHERM5 3 2 4.5e-1
RTHERM6 2 TL 4.6e-1
5
SABER Thermal Model
SABER thermal model FDP8896T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =9e-4
ctherm.ctherm2 6 5 =1e-3
ctherm.ctherm3 5 4 =2e-3
ctherm.ctherm4 4 3 =3e-3
ctherm.ctherm5 3 2 =7e-3
ctherm.ctherm6 2 tl =8e-2
rtherm.rtherm1 th 6 =3.0e-2
rtherm.rtherm2 6 5 =1.0e-1
rtherm.rtherm3 5 4 =1.8e-1
rtherm.rtherm4 4 3 =2.8e-1
rtherm.rtherm5 3 2 =4.5e-1
rtherm.rtherm6 2 tl =4.6e-1
RTHERM3
RTHERM4
RTHERM5
4
3
CTHERM3
CTHERM4
CTHERM5
}
2
?200 8 Fairchild Semiconductor Corporation
RTHERM6
tl
CASE
CTHERM6
FDP8896 Rev. A 2
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