- 您现在的位置：买卖IC网 > Datasheet目录424 > FDP8876 (Fairchild Semiconductor)MOSFET N-CH 30V 70A TO-220 Datasheet资料下载
参数资料
| 型号： | FDP8876 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 70A TO-220 |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 70A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.7 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 15V |
| 功率 - 最大： | 70W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
30
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 24V
V GS = 0V
V GS = ±20V
T A = 150 o C
-
-
-
-
1
250
±100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
1.2
-
2.5
V
I D = 40A, V GS = 10V
-
6.1
8.7
r DS(ON)
Drain to Source On Resistance
I D = 40A, V GS = 4.5V
I D = 40, V GS = 10V,
T A = 175 o C
-
-
7.7
11
10.5
14
m ?
Dynamic Characteristics
C ISS
C OSS
C RSS
R G
Q g(TOT)
Q g(5)
Q g(TH)
Q gs
Q gs2
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Sourse Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V DS = 15V, V GS = 0V,
f = 1MHz
V GS =0.5V, f = 1MHz
V GS = 0V to 10V V DD = 15V
V GS = 0V to 5V I D = 40A
V GS = 0V to 1V I g = 1.0mA
-
-
-
-
-
-
-
-
-
-
1700
340
210
2.3
32
17
1.6
4.7
3.1
7.0
-
-
-
-
45
24
2.4
-
-
-
pF
pF
pF
?
nC
nC
nC
nC
nC
nC
Switching Characteristics (V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
9
189
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 15V, I D = 40A
V GS = 10V, R GS = 10 ?
-
-
-
-
97
51
39
-
-
-
-
135
ns
ns
ns
ns
Drain-Source Diode Characteristic
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 40A
I SD = 3.2A
I SD = 40A, dI SD /dt=100A/ μ s
I SD = 40A, dI SD /dt=100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
22
9
V
V
ns
nC
Notes:
1: Starting T J =25 O C,L=1mH,I AS =19A,V DD =27V,V GS =10V
2: Pulse width=100s
FDP8876 Rev. A
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDP8880 | MOSFET N-CH 30V 54A TO-220AB |
| FDP8896 | MOSFET N-CH 30V 92A TO-220AB |
| FDP8N50NZ | MOSFET N-CH 500V TO-220AB-3 |
| FDPC8011S | MOSF DL N CH ASYM 25V PWR CLIP33 |
| FDPF045N10A | MOSFET N-CH 100V 67A TO-220-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP8878 | 功能描述:MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8880 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8880_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDP8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ |
发布紧急采购，3分钟左右您将得到回复。