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参数资料
| 型号： | FDP8870_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 156A TO-220 |
| 产品变化通告： | Product Obsolescence 13/Aug/2010 |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 156A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.1 毫欧 @ 35A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 132nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5200pF @ 15V |
| 功率 - 最大： | 160W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
Typical Characteristics T C = 25 ° C unless otherwise noted
1000
10 μ s
500
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100
100 μ s
100
STARTING T J = 25 o C
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
1ms
10
1
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
10ms
DC
1
STARTING T J = 150 o C
1
10
60
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
160
V GS = 5V
120
V DD = 15V
T J = 175 o C
120
V GS = 10 V
V GS = 4V
80
40
T J = 25 o C
T J = -55 o C
80
40
V GS = 3V
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
1.5
2.0 2.5 3.0
3.5
0
0
0.25
0.5
0.75
1.0
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
10
I D = 35A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.4
8
1.2
6
1.0
4
2
I D = 1A
0.8
0.6
V GS = 10V, I D = 35A
2
4
6
8
10
-80
-40
0 40 80 120
160
200
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
?200 8 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDP8870 Rev. A 3
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