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| 型号： | FDP8878 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m Ohm |
| 中文描述： | 40 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 201K |
| 代理商： | FDP8878 |
November 2005
F
2005 Fairchild Semiconductor Corporation
FDP8878 Rev. A
www.fairchildsemi.com
1
FDP8878
N-Channel Logic Level PowerTrench
MOSFET
30V, 40A, 15m
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
r
DS(ON)
= 15m
, V
GS
= 10V, I
D
= 40A
r
DS(ON)
= 19m
, V
GS
= 4.5V, I
D
= 36A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
G
D
D
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V)
Pulsed (Note 4)
I
D
40
A
36
141
60
22
40.5
A
A
E
AS
Single Pulse Avalanche Energy (Note 1)
L = 1mH, I
AS
= 11A
L = 43
μ
H,I
AS
= 32A
mJ
P
D
T
J
, T
STG
Power dissipation
Operating and Storage Temperature
W
o
C
-55 to 175
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case (Note 2)
3.7
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
43
Device Marking
FDP8878
Device
FDP8878
Package
TO-220
Reel Size
Tube
Tape Width
n/a
Quantity
45 units
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相关代理商/技术参数 |
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|---|---|
| FDP8880 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8880_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDP8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP8896_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ |
| FDP8896_F085 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET. (Transferred to alternate site. Please contact local reps fo RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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