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参数资料
| 型号： | FDP8880 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 54A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 50 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 54A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.6 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1240pF @ 15V |
| 功率 - 最大： | 55W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | FDP8880-ND FDP8880FS |
Typical Characteristics T C = 25°C unless otherwise noted
400
100
10
OPERATION IN THIS
10 μ s
100 μ s
1ms
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
STARTING T J = 25 o C
1
0.1
AREA MAY BE
LIMITED BY r DS(ON)
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
10ms
DC
10
1
STARTING T J = 150 o C
1
10
40
0.001
0.01 0.1 1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
160
V GS = 4.5V
V GS = 3.5 V
V DD = 15V
60
40
120
80
V GS = 10 V
V GS = 3V
20
T J = 25 o C
T J = 175 o C
T J = -55 o C
40
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 2.5V
0
1.5
2.0 2.5 3.0 3.5
4.0
0
0
0.25
0.5
0.75
1.0
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
20
I D = 54A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.7
1.53
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
16
12
8
I D = 5A
1.36
1.19
1.02
0.85
0.7
V GS = 10V, I D = 54A
2
4
6
8
10
-80
-40
0 40 80 120 160
200
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
?20 08 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A 1
5
www.fairchildsemicom
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| FDP8880_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
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| FDP8N50NZ | 功能描述:MOSFET UNIFET2 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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