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| 型号： | FDPF44N25T |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 44A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 44A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 69 毫欧 @ 22A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 61nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2870pF @ 25V |
| 功率 - 最大： | 38W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
November 2013
FDPF44N25T
N-Channel UniFET TM MOSFET
250 V, 44 A, 69 m Ω
Features
? R DS(on) = 69 m Ω (Max.) @ V GS = 10 V, I D = 22 A
? Low Gate Charge (Typ. 47 nC)
? Low C rss (Typ. 60 pF)
Applications
? PDP TV
? Lighting
? Uninterruptible Power Supply
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? AC-DC Power Supply
D
D
G
S
Absolute Maximum Ratings
TO-220F
T C = 25°C unless otherwise noted.
G
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FDPF44N25T
250
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
44*
26.4*
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
176*
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/d
(Note 2)
(Note 1)
(Note 1)
(Note 3)
2055
44
30.7
4.5
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate Above 25 ° C
38
0.3
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDPF44N25T
3.3
62.5
Unit
° C/W
?2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C1
1
www.fairchildsemi.com
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