参数资料
型号: FDQ7244S
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package
中文描述: 11 A, 30 V, 0.0095 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: SO-14/11
文件页数: 6/10页
文件大小: 301K
代理商: FDQ7244S
FDQ7244S Rev D1 (W)
Typical Characteristics : Q2
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDQ7244S Q2.
TIME : 12nS/div
C
Figure 12. FDQ7244S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6644).
TIME : 12.5nS/div
C
Figure 13. Non-SyncFET (FDS6644) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage. This
will increase the power dissipated in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
D
,
T
A
= 25
o
C
T
A
= 100
o
C
T
A
= 125
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
.
F
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