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参数资料
| 型号： | FDR8508P_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 274K |
| 代理商： | FDR8508P_NL |
FDR8508P
FDR8508P Rev. C
FDR8508P
Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on state resistance and yet maintain low gate charge for
superior switching performance.
Applications
Load switch
DC/DC converter
Motor driving
March 1999
Features
-3.0 A, -30 V. R
DS(ON) = 0.052 @ VGS = -10V
R
DS(ON) = 0.086 @ VGS = -4.5V.
Low gate charge. (8nC typical).
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability.
Small footprint (38% smaller than a standard SO-8);
low profile package (1 mm thick); power handling
capability similar to SO-8.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol
Parameter
FDR8508P
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
- Continuous
(Note 1a)
-3
A
- Pulsed
-20
PD
Power Dissipation
0.8
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
156
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.8508
FDR8508P
13”
12mm
3000 units
SuperSOT-8
D2
D1
S2
G2
S1
G1
pin #1
1
5
7
8
2
6
3
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR8508PQ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDR8521L | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR8521L_Q | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR856P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR858P | 功能描述:MOSFET SSOT-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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