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参数资料
| 型号： | FDR8508P_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 274K |
| 代理商： | FDR8508P_NL |
FDR8508P
FDR8508P Rev. C
Typical Characteristics
Figure 1: On-Region Characteristics
Figure 2: On-Resistance Variation
vs Drain Current and Gate Voltage
Figure 3: On-Resistance Variation
vs Temperature
Figure 4: On-Resistance Variation
vs Gate-To-Source Voltage
Figure 5: Transfer Characteristics
Figure 6: Body Diode Forward Voltage
Variation vs Source Current
and Temperature
0
4
8
12
16
20
0123
45
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-I
D
,DRAI
N
CURRE
NT
(A)
VGS=-10V
-6.0V
-4.5V
-4.0V
-3.5V
-3.0V
0.02
0.04
0.06
0.08
0.1
0.12
0
4
8
121620
-ID, DRAIN CURRENT (A)
NO
RMALIZE
D
O
N
-R
E
S
IS
T
ANCE
VGS=-3.5V
-4.0V
-4.5V
-5.5V
-7.0V
-10V
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N)
,NO
RMALI
Z
E
D
DRAI
N-S
O
URCE
O
N
-RE
S
IS
T
ANCE
ID=-3A
VGS=-10V
0
0.04
0.08
0.12
0.16
0.2
0
246
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
,O
N
RE
S
IS
T
ANCE
(
O
HM)
TJ=125
oC
o
ID=-1.5A
0
4
8
12
16
20
12
34
5
-VGS, GATE TO SOURCE VOLTAGE (V)
-I
D
,DRAI
N
CURRE
NT
(A)
VGS=-5V
TJ=-55
o
C
25
o
125
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE VOLTAGE (V)
-I
S
,R
EVER
SE
DRAIN
CURRE
NT
(
A
)
TJ=125
o
C
25
o
C
-55
o
C
VGS=0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR8508PQ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDR8521L | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR8521L_Q | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR856P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR858P | 功能描述:MOSFET SSOT-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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