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参数资料
| 型号： | FDR8508P_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-8 |
| 文件页数： | 4/8页 |
| 文件大小： | 274K |
| 代理商： | FDR8508P_NL |
FDR8508P
FDR8508P Rev. C
Typical Characteristics (continued)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
Figure 9: Maximum Safe Operating Area
Figure 10: Single Pulse Maximum
Power Dissipation
0
2
4
6
8
10
03
69
12
15
Qg, GATE CHARGE (nC)
-V
GS
,G
A
TE
-S
O
URCE
V
O
LTAG
E
(V
)
ID=-3.0A
VDS=-5V
-10V
0
200
400
600
800
1000
1200
0
6
12
18
24
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
TANCE
(pF)
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-I
D
,DRAI
N
CURRE
NT
(A)
RDS(ON)
DC
10s
1s
100ms
10ms
1ms
100
s
0
10
20
30
40
50
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
POW
E
R
(
W
)
SINGLE PULSE
RθJA=156
o
C/W
o
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t , TIME (sec)
T
R
AN
S
IEN
T
H
ER
M
A
L
R
E
S
IS
T
AN
C
E
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R
(t) = r(t) * R
R
= 135
°C/W
θJA
T - T
= P * R
(t)
θJA
A
J
P(pk)
t1
t 2
r(t
),
N
O
R
M
A
L
IZ
E
D
E
F
E
C
T
IV
E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDR8508PQ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDR8521L | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR8521L_Q | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR856P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDR858P | 功能描述:MOSFET SSOT-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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